ANOMALOUS DIFFUSION IN PHOSPHORUS IMPLANTED SILICON

被引：2

作者：

GALLONI, R

FAVERO, L

CARABELAS, A

机构：

来源：

RADIATION EFFECTS LETTERS | 1982年 / 68卷 / 02期

关键词：

D O I：

10.1080/01422448208226906

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：39 / 44

页数：6

共 12 条

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GALLONI, R ;

GABILLI, E ;

NIPOTI, R ;

OLZI, E ;

SERVIDORI, M ;

TURISINI, G ;

ZIGNANI, F .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6735-6742

[2] RADIATION-DAMAGE IN SILICON PRODUCED BY PHOSPHORUS IMPLANTATION - RANDOM AND ALIGNED IMPLANTS [J].

CEMBALI, F ;

DORI, L ;

GALLONI, R ;

SERVIDORI, M ;

ZIGNANI, F .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (1-2) :111-117

[3]

CEMBALI GF, 1982, 4TH EC PHOT SOL EN C

[4]

CEMBALI GF, 1976, ION IMPLANTATION SEM

[5] EXPERIMENTAL AND COMPUTER-ANALYSIS OF P+-ION PENETRATION TAILS IN A SLO2-SI 2-LAYER SYSTEM [J].

DESALVO, A ;

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ROSA, R ;

ZIGNANI, F .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) :1994-1997

[6] INFLUENCE OF IMPURITIES AND CRYSTALLINE DEFECTS ON ELECTRON-MOBILITY IN HEAVILY DOPED SILICON [J].

FINETTI, M ;

GALLONI, R ;

MAZZONE, AM .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) :1381-1385

[7]

GALLONI R, UNPUB

[8]

MASETTI G, 1979, SOLID STATE ELECTRON, V3, P65

[9]

MASETTI G, 1977, SEMICONDUCTOR SILICO, P648

[10]

Mayer J. W., 1970, ION IMPLANTATION SEM

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