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ANNEALING OF PHOSPHORUS IMPLANTED SILICON-WAFERS BY MULTISCANNING ELECTRON-BEAM - SOLAR-CELLS APPLICATION
被引:9
作者
:
BENTINI, GG
论文数:
0
引用数:
0
h-index:
0
机构:
C.N.R. Istituto LAMEL, via Castagnoli 1, 40126 Bologna, Italy
BENTINI, GG
GALLONI, R
论文数:
0
引用数:
0
h-index:
0
机构:
C.N.R. Istituto LAMEL, via Castagnoli 1, 40126 Bologna, Italy
GALLONI, R
GABILLI, E
论文数:
0
引用数:
0
h-index:
0
机构:
C.N.R. Istituto LAMEL, via Castagnoli 1, 40126 Bologna, Italy
GABILLI, E
NIPOTI, R
论文数:
0
引用数:
0
h-index:
0
机构:
C.N.R. Istituto LAMEL, via Castagnoli 1, 40126 Bologna, Italy
NIPOTI, R
OLZI, E
论文数:
0
引用数:
0
h-index:
0
机构:
C.N.R. Istituto LAMEL, via Castagnoli 1, 40126 Bologna, Italy
OLZI, E
SERVIDORI, M
论文数:
0
引用数:
0
h-index:
0
机构:
C.N.R. Istituto LAMEL, via Castagnoli 1, 40126 Bologna, Italy
SERVIDORI, M
TURISINI, G
论文数:
0
引用数:
0
h-index:
0
机构:
C.N.R. Istituto LAMEL, via Castagnoli 1, 40126 Bologna, Italy
TURISINI, G
ZIGNANI, F
论文数:
0
引用数:
0
h-index:
0
机构:
C.N.R. Istituto LAMEL, via Castagnoli 1, 40126 Bologna, Italy
ZIGNANI, F
机构
:
[1]
C.N.R. Istituto LAMEL, via Castagnoli 1, 40126 Bologna, Italy
来源
:
JOURNAL OF APPLIED PHYSICS
|
1981年
/ 52卷
/ 11期
关键词
:
All Open Access;
Bronze;
D O I
:
10.1063/1.328625
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
27
引用
收藏
页码:6735 / 6742
页数:8
相关论文
共 27 条
[1]
AUSTON DH, 1979, LASER SOLID INTERACT, P11
[2]
BAKISH R, 1978, ELECTRON ION BEAM SC
[3]
MULTI-SCANNING ELECTRON-BEAM ANNEALING OF PHOSPHORUS-IMPLANTED SILICON
BENTINI, GG
论文数:
0
引用数:
0
h-index:
0
BENTINI, GG
GALLONI, R
论文数:
0
引用数:
0
h-index:
0
GALLONI, R
NIPOTI, R
论文数:
0
引用数:
0
h-index:
0
NIPOTI, R
[J].
APPLIED PHYSICS LETTERS,
1980,
36
(08)
: 661
-
663
[4]
BENTINI GG, P IBMM80 C ALBANY
[5]
BENTINI GG, 1980, LASER ELECTRON BEAM, P272
[6]
INCORPORATION OF IMPLANTED IN AND SB IN SILICON DURING AMORPHOUS LAYER REGROWTH
BLOOD, P
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BLOOD, P
BROWN, WL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BROWN, WL
MILLER, GL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
MILLER, GL
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(01)
: 173
-
182
[7]
SUPERSATURATED SOLID-SOLUTIONS AFTER SOLID-PHASE EPITAXIAL-GROWTH IN BI-IMPLANTED SILICON
CAMPISANO, SU
论文数:
0
引用数:
0
h-index:
0
CAMPISANO, SU
RIMINI, E
论文数:
0
引用数:
0
h-index:
0
RIMINI, E
BAERI, P
论文数:
0
引用数:
0
h-index:
0
BAERI, P
FOTI, G
论文数:
0
引用数:
0
h-index:
0
FOTI, G
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(02)
: 170
-
172
[8]
REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON
CSEPREGI, L
论文数:
0
引用数:
0
h-index:
0
机构:
CALTECH,PASADENA,CA 91125
CSEPREGI, L
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
机构:
CALTECH,PASADENA,CA 91125
MAYER, JW
SIGMON, TW
论文数:
0
引用数:
0
h-index:
0
机构:
CALTECH,PASADENA,CA 91125
SIGMON, TW
[J].
APPLIED PHYSICS LETTERS,
1976,
29
(02)
: 92
-
93
[9]
FERRIS SD, 1979, LASER SOLID INTERACT
[10]
INFLUENCE OF IMPURITIES AND CRYSTALLINE DEFECTS ON ELECTRON-MOBILITY IN HEAVILY DOPED SILICON
FINETTI, M
论文数:
0
引用数:
0
h-index:
0
机构:
CNR,LAMEL LAB,VIA CASTAGNOLI 1,I-40126 BOLOGNA,ITALY
CNR,LAMEL LAB,VIA CASTAGNOLI 1,I-40126 BOLOGNA,ITALY
FINETTI, M
GALLONI, R
论文数:
0
引用数:
0
h-index:
0
机构:
CNR,LAMEL LAB,VIA CASTAGNOLI 1,I-40126 BOLOGNA,ITALY
CNR,LAMEL LAB,VIA CASTAGNOLI 1,I-40126 BOLOGNA,ITALY
GALLONI, R
MAZZONE, AM
论文数:
0
引用数:
0
h-index:
0
机构:
CNR,LAMEL LAB,VIA CASTAGNOLI 1,I-40126 BOLOGNA,ITALY
CNR,LAMEL LAB,VIA CASTAGNOLI 1,I-40126 BOLOGNA,ITALY
MAZZONE, AM
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(03)
: 1381
-
1385
←
1
2
3
→
共 27 条
[1]
AUSTON DH, 1979, LASER SOLID INTERACT, P11
[2]
BAKISH R, 1978, ELECTRON ION BEAM SC
[3]
MULTI-SCANNING ELECTRON-BEAM ANNEALING OF PHOSPHORUS-IMPLANTED SILICON
BENTINI, GG
论文数:
0
引用数:
0
h-index:
0
BENTINI, GG
GALLONI, R
论文数:
0
引用数:
0
h-index:
0
GALLONI, R
NIPOTI, R
论文数:
0
引用数:
0
h-index:
0
NIPOTI, R
[J].
APPLIED PHYSICS LETTERS,
1980,
36
(08)
: 661
-
663
[4]
BENTINI GG, P IBMM80 C ALBANY
[5]
BENTINI GG, 1980, LASER ELECTRON BEAM, P272
[6]
INCORPORATION OF IMPLANTED IN AND SB IN SILICON DURING AMORPHOUS LAYER REGROWTH
BLOOD, P
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BLOOD, P
BROWN, WL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BROWN, WL
MILLER, GL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
MILLER, GL
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(01)
: 173
-
182
[7]
SUPERSATURATED SOLID-SOLUTIONS AFTER SOLID-PHASE EPITAXIAL-GROWTH IN BI-IMPLANTED SILICON
CAMPISANO, SU
论文数:
0
引用数:
0
h-index:
0
CAMPISANO, SU
RIMINI, E
论文数:
0
引用数:
0
h-index:
0
RIMINI, E
BAERI, P
论文数:
0
引用数:
0
h-index:
0
BAERI, P
FOTI, G
论文数:
0
引用数:
0
h-index:
0
FOTI, G
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(02)
: 170
-
172
[8]
REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON
CSEPREGI, L
论文数:
0
引用数:
0
h-index:
0
机构:
CALTECH,PASADENA,CA 91125
CSEPREGI, L
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
机构:
CALTECH,PASADENA,CA 91125
MAYER, JW
SIGMON, TW
论文数:
0
引用数:
0
h-index:
0
机构:
CALTECH,PASADENA,CA 91125
SIGMON, TW
[J].
APPLIED PHYSICS LETTERS,
1976,
29
(02)
: 92
-
93
[9]
FERRIS SD, 1979, LASER SOLID INTERACT
[10]
INFLUENCE OF IMPURITIES AND CRYSTALLINE DEFECTS ON ELECTRON-MOBILITY IN HEAVILY DOPED SILICON
FINETTI, M
论文数:
0
引用数:
0
h-index:
0
机构:
CNR,LAMEL LAB,VIA CASTAGNOLI 1,I-40126 BOLOGNA,ITALY
CNR,LAMEL LAB,VIA CASTAGNOLI 1,I-40126 BOLOGNA,ITALY
FINETTI, M
GALLONI, R
论文数:
0
引用数:
0
h-index:
0
机构:
CNR,LAMEL LAB,VIA CASTAGNOLI 1,I-40126 BOLOGNA,ITALY
CNR,LAMEL LAB,VIA CASTAGNOLI 1,I-40126 BOLOGNA,ITALY
GALLONI, R
MAZZONE, AM
论文数:
0
引用数:
0
h-index:
0
机构:
CNR,LAMEL LAB,VIA CASTAGNOLI 1,I-40126 BOLOGNA,ITALY
CNR,LAMEL LAB,VIA CASTAGNOLI 1,I-40126 BOLOGNA,ITALY
MAZZONE, AM
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(03)
: 1381
-
1385
←
1
2
3
→