INFLUENCE OF THE NON-EQUILIBRIUM VACANCIES ON THE DIFFUSION OF PHOSPHORUS INTO SILICON

被引：11

作者：

MATHIOT, D

PFISTER, JC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 04期

关键词：

D O I：

10.1063/1.331049

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3053 / 3058

页数：6

共 11 条

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[2]

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[7]

PEART RF, 1973, RAD DAMAGE DEFECTS S, P170

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[9] ENTHALPY OF VACANCY MIGRATION IN SI AND GE [J].

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[10] COMPARISON OF THEORY WITH QUENCHING EXPERIMENTS FOR ENTROPY AND ENTHALPY OF VACANCY FORMATION IN SI AND GE [J].

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