ENTHALPY OF VACANCY MIGRATION IN SI AND GE

被引：113

作者：

VANVECHTEN, JA ^{[1
]}

机构：

[1] BELL TEL LABS, MURRAY HILL, NJ 07974 USA

来源：

PHYSICAL REVIEW B | 1974年 / 10卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.10.1482

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1482 / 1505

页数：24

共 117 条

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[3]

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[6]

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[8]

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[9] PSEUDOPOTENTIAL CALCULATIONS OF RELAXATION AND FORMATION ENERGY OF A VACANCY IN ALUMINUM [J].

CHANG, R ;

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JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (02) :465-&

[10] PRODUCTION OF DIVACANCIES AND VACANCIES BY ELECTRON IRRADIATION OF SILICON [J].

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