DOPANT REDISTRIBUTION IN HEAVILY DOPED SILICON - CONFIRMATION OF THE VALIDITY OF THE VACANCY-PERCOLATION MODEL

被引：32

作者：

MATHIOT, D

PFISTER, JC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 02期

关键词：

D O I：

10.1063/1.343476

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：970 / 972

页数：3

共 10 条

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TIDEMANDPETERSSON, P .

APPLIED PHYSICS LETTERS, 1986, 48 (26) :1805-1807

[5] DOPANT DIFFUSION IN SILICON - A CONSISTENT VIEW INVOLVING NONEQUILIBRIUM DEFECTS [J].

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[7]

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[8] SCALING THEORY OF PERCOLATION CLUSTERS [J].

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[9]

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