ENHANCED DIFFUSION PHENOMENA DURING RAPID THERMAL ANNEALING OF PREAMORPHIZED BORON-IMPLANTED SILICON

被引：26

作者：

GUIMARAES, S ^{[1
]}

LANDI, E ^{[1
]}

SOLMI, S ^{[1
]}

机构：

[1] CNR,INST LAMEL,I-40126 BOLOGNA,ITALY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 95卷 / 02期

关键词：

D O I：

10.1002/pssa.2210950228

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：589 / 598

页数：10

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