ANOMALOUS ENHANCED DIFFUSION AND ELECTRICAL ACTIVATION OF BORON IN SILICON AFTER RAPID ISOTHERMAL ANNEALING

被引：8

作者：

GUIMARAES, S ^{[1
]}

KOGLER, R ^{[1
]}

LANDI, E ^{[1
]}

SOLMI, S ^{[1
]}

WIESER, E ^{[1
]}

机构：

[1] ACAD SCI GDR,ZENT INST KERNFORSCH,DDR-8051 DRESDEN,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 93卷 / 02期

关键词：

D O I：

10.1002/pssa.2210930219

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：549 / 557

页数：9

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[10] RAPID THERMAL ANNEALING OF ARSENIC AND BORON-IMPLANTED SILICON [J].

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