RAPID THERMAL ANNEALING CHARACTERISTICS OF AS+-IMPLANTED AND BF2+-IMPLANTED SI

被引：16

作者：

KWOR, R ^{[1
]}

KWONG, DL ^{[1
]}

YEO, YK ^{[1
]}

机构：

[1] UNIVERSAL ENERGY SYST INC,DAYTON,OH 45432

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 01期

关键词：

D O I：

10.1063/1.94975

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：77 / 79

页数：3

共 10 条

[1] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J].

CSEPREGI, L ;

MAYER, JW ;

SIGMON, TW .

APPLIED PHYSICS LETTERS, 1976, 29 (02) :92-93

[2]

FAIR RB, 1983, 1983 INT EL DEV M, P658

[3] HEAT-PULSE ANNEALING OF ARSENIC-IMPLANTED SILICON WITH A CW ARC LAMP [J].

GAT, A .

ELECTRON DEVICE LETTERS, 1981, 2 (04) :85-87

[4]

HODGSON RT, 1983, MATER RES SOC S P, V13, P355

[5] TRANSIENT ENHANCED DIFFUSION IN ARSENIC-IMPLANTED SHORT-TIME ANNEALED SILICON [J].

KALISH, R ;

SEDGWICK, TO ;

MADER, S ;

SHATAS, S .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :107-109

[6]

KWOR R, 1983, 164TH EL SOC M WASH

[7] RAPID THERMAL ANNEALING OF ARSENIC AND BORON-IMPLANTED SILICON [J].

NARAYAN, J ;

HOLLAND, OW ;

EBY, RE ;

WORTMAN, JJ ;

OZGUZ, V ;

ROZGONYI, GA .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :957-959

[8] ACTIVATION OF ARSENIC-IMPLANTED SILICON USING AN INCOHERENT-LIGHT SOURCE [J].

POWELL, RA ;

YEP, TO ;

FULKS, RT .

APPLIED PHYSICS LETTERS, 1981, 39 (02) :150-152

[9]

SEDGWICK TO, 1983, NOV RES SOC M BOST

[10]

SEIDEL TE, 1983, IEEE ELEC DEV LETT, V4, P10

← 1 →