Growth mechanism of stacked-cone and smooth-surface GaN nanowires

被引：41

作者：

Cai, XM

Djurisic, AB

Xie, MH

Chiu, CS

Gwo, S

机构：

[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

[2] Natl Tsing Hua Univ, Dept Phys, Hsinchu 300, Taiwan

[3] Natl Tsing Hua Univ, Inst Microelectromech Syst, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 18期

关键词：

D O I：

10.1063/1.2126118

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Gallium nitride (GaN) nanowires were grown on uncoated or Ni-coated Si substrates by evaporation of Ga in NH3/Ar gas flow. A mixture of nanowires growing along [10 (1) over bar0] and [0001] was obtained, where the former showed smooth surfaces and the latter showed the stacked-cone morphology. The yield of the two types of nanowires was found to depend on the NH3 flow. The reduction of NH3 flow led to fewer stacked-cone nanowires. The growth mechanisms of the two types of GaN nanowires are discussed. (C) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

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