Pre-amplifier integrated uni-travelling-carrier photodiode module for operation in 120GHz band

被引：2

作者：

Ito, H

Furuta, T

Hirata, A

Kosugi, T

Muramoto, Y

Tokumitsu, M

Nagatsuma, T

Ishibashi, T

机构：

[1] NTT Corp, NTT Photon Labs, Atsugi, Kanagawa 2430198, Japan

[2] NTT Corp, NTT Microsyst Integrat Labs, Atsugi, Kanagawa 2430198, Japan

[3] NTT Elect Corp, Atsugi, Kanagawa 2430198, Japan

来源：

ELECTRONICS LETTERS | 2005年 / 41卷 / 06期

关键词：

D O I：

10.1049/el:20058365

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A pre-amplifier integrated UTC-PD module with a rectangular-waveguide output port for operation in the 120 GHz band has been realised. The integrated amplifier achieves an 8 dB increase in the output power, resulting in an equivalent responsivity as high as 1.0 A/W. A 10 Gbit/s error-free wireless transmission at 125 GHz has also been demonstrated using the fabricated module.

引用

页码：360 / 362

页数：3

共 6 条

[1]

HIRATA A, 2003, INT TOP M MICR PHOT, P35

[2]

ISHIBASHI T, 1997, TECH DIG ULTRAFAST E, P83

[3] InP/lnGaAs uni-travelling-carrier photodiode with 310GHz bandwidth [J].