Properties of mn and co implanted ZnO crystals

被引：10

作者：

Polyakov, AY

Govorkov, AV

Smirnov, NB

Pashkova, NV

Pearton, SJ

Overberg, ME

Abernathy, CR

Norton, DP

Zavada, JM

Wilson, RG

机构：

[1] Inst Rare Met, Moscow 119017, Russia

[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[3] USA, Res Off, Res Triangle Pk, NC 27709 USA

来源：

SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 09期

基金：

俄罗斯基础研究基金会; 美国国家科学基金会;

关键词：

D O I：

10.1016/S0038-1101(03)00083-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrical properties, room temperature optical absorption bands and 300 and 90 K microcathodoluminescence (MCL) bands were studied in heavily Mn and Co implanted ZnO samples annealed at 700 C. Samples processed under the same conditions have previously shown ferromagnetic behavior. The Mn and Co implanted and annealed regions remain n-type and have a higher electron concentration than in control samples. Therefore, the spin alignment in ZnMnO and ZnCoO is not mediated by the classical mechanism involving free holes. Optical absorption bands near 1.9 eV (Co) and 2 eV (Mn) and the MCL bands near 1.84 eV (Co) and 1.89 eV (Mn) are found to be associated with transition metal (TM) ions. These bands are tentatively attributed to internal transitions between the levels of the substitutional TM ions. In addition to those TM ions related bands we also observed strong absorption bands at 0.75, 1.4, 2.35 and 2.5 eV and MCL bands near 2.3 and 2.5 eV. All these bands are related to radiation damage defects. (C) 2003 Elsevier Science Ltd. All rights reserved.

引用

页码：1523 / 1531

页数：9

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