Depth-profile study of the electronic structures at Ga2O3(Gd2O3) and Gd2O3-GaN interfaces by X-ray photoelectron spectroscopy

被引：25

作者：

Lay, TS ^{[1
]}

Liao, YY

Hung, WH

Hong, M

Kwo, J

Mannaerts, JP

机构：

[1] Natl Sun Yat Sen Univ, Inst Electroopt Engn, Kaohsiung 804, Taiwan

[2] Natl Taiwan Normal Univ, Dept Chem, Taipei 116, Taiwan

[3] Natl Tsing Hua Univ, Hsinchu 300, Taiwan

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 278卷 / 1-4期

关键词：

interfaces; molecular beam epitaxy; gadolinium compounds; nitrides; dielectric materials; semiconducting gallium compounds;

D O I：

10.1016/j.jcrysgro.2004.12.128

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The depth profile of high-resolution photoelectron spectra at Ga2O3(Gd2O3)-GaN and Gd2O3-GaN interfaces grown by molecular beam epitaxy (MBE) has been obtained by using synchrotron radiation beam and low-energy Ar+ sputtering. The data indicate that both of the oxide layers are highly hygroscopic with the observation of O-H bonding. The valence-band offsets (Δ Ev) of ∼ 1.1 and 1.0eV were also measured for the Ga2O3(Gd2O3)-GaN and Gd2O3-GaN interfaces, respectively. © 2005 Elsevier B.V. All rights reserved.

引用

页码：624 / 628

页数：5

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