Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes

被引：61

作者：

Hong, M

Anselm, KA

Kwo, J

Ng, HM

Baillargeon, JN

Kortan, AR

Mannaerts, JP

Cho, AY

Lee, CM

Chyi, JI

Lay, TS

机构：

[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

[2] Natl Cent Univ, Dept EE, Chungli 32054, Taiwan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 03期

关键词：

D O I：

10.1116/1.591402

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ga2O3(Gd2O3), electron beam evaporated from a single crystal Ga5Gd3O12 garnet, was en: situ deposited on molecular beam epitaxy grown GaN of Ga-polar surface. Using capacitance-voltage measurement, accumulation and depletion behavior was observed in the Ga2O3(Gd2O3)/GaN metal-oxide-semiconductor diodes, with an interfacial density of states less than 10(11) cm(-2) eV(-1) The Ga2O3(Gd2O3)/GaN interface remains intact with the samples subject to rapid-thermal annealing up to 950 degrees C, as studied from x-ray reflectivity measurements. (C) 2000 American Vacuum Society. [S0734-211X(00)01203-8].

引用

页码：1453 / 1456

页数：4

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