Contact resistance of dibenzotetrathiafulvalene-based organic transistors with metal and organic electrodes

被引:71
作者
Shibata, Koji [1 ]
Ishikawa, Ken [1 ]
Takezoe, Hideo [1 ]
Wada, Hiroshi [1 ,2 ]
Mori, Takehiko [1 ,2 ]
机构
[1] Tokyo Inst Technol, Dept Organ & Polymer Mat, Meguro Ku, Tokyo 1528552, Japan
[2] Tokyo Inst Technol, Dept Chem & Mat Sci, Meguro Ku, Tokyo 1528552, Japan
关键词
D O I
10.1063/1.2834374
中图分类号
O59 [应用物理学];
学科分类号
摘要
Thin-film transistors of dibenzotetrathiafulvalene (DBTTF) are investigated by changing the source and drain (S/D) electrode materials. Not only the mobility but also the contact resistance, estimated from the transfer line method, changes depending on the metal work functions. Nonetheless, S/D electrodes made of a metallic organic charge-transfer salt, (tetrathiafulvalene) (tetracyanoquinodimethane) [(TTF)(TCNQ)] exhibits much smaller contact resistance, which is attributed to small potential shift on the organic/organic interface compared with the organic/metal interface. A thin film of (DBTTF)(TCNQ) works as an active layer of air-stable n-channel organic transistors when (TTF)(TCNQ) is used as the S/D electrodes. (c) 2008 American Institute of Physics.
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页数:3
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