Calorimetric determination of the enthalpy of formation of InN and comparison with AlN and GaN

被引:56
作者
Ranade, MR
Tessier, F
Navrotsky, A
Marchand, R
机构
[1] Univ Calif Davis, Dept Chem Engn & Mat Sci, Thermochem Facil, Davis, CA 95616 USA
[2] Univ Rennes 1, Inst Chem Rennes, CNRS, UMR 6512, F-35042 Rennes, France
基金
美国能源部;
关键词
D O I
10.1557/JMR.2001.0389
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The standard enthalpy of formation of InN at 298 K has been determined using high-temperature oxidative drop solution calorimetry in a molten sodium molybdate solvent at 975 K. Calorimetric measurements were performed on six InN samples with varying nitrogen contents. The samples were characterized using x-ray diffraction, chemical analysis, electron microprobe analysis, and Brunauer-Emmett-Teller surface area measurement. The variation of the enthalpy of drop solution (kJ/g) with nitrogen content is approximately linear. The data, when extrapolated to stoichiometric InN, yield a standard enthalpy of formation from the elements of -28.6 +/- 9.2 kJ/mol. The relatively large error results from the deviation of individual points from the straight line rather than uncertainties in each set of data for a given sample. This new directly measured enthalpy of formation is in good agreement with the old combustion calorimetric result by Hahn and Juza (1940). However, this calorimetric enthalpy of formation is significantly different from the enthalpy of formation values derived from the temperature dependence of the apparent decomposition pressure of nitrogen over InN. A literature survey of the enthalpies of formation of III-N nitride compounds is presented.
引用
收藏
页码:2824 / 2831
页数:8
相关论文
共 67 条
[1]  
[Anonymous], 1995, US GEOL SURVEY B
[2]   Low pressure synthesis of bulk, polycrystalline gallium nitride [J].
Argoitia, A ;
Hayman, CC ;
Angus, JC ;
Wang, L ;
Dyck, JS ;
Kash, K .
APPLIED PHYSICS LETTERS, 1997, 70 (02) :179-181
[3]   Synthesis routes and characterization of high-purity, single-phase gallium nitride powders [J].
Balkas, CM ;
Davis, RF .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1996, 79 (09) :2309-2312
[4]  
Barin I., 2008, Thermochemical Data of Pure Substances, VThird
[5]   Band gap engineering in amorphous AlxGa1-xN:: Experiment and ab initio calculations [J].
Chen, H ;
Chen, KY ;
Drabold, DA ;
Kordesch, ME .
APPLIED PHYSICS LETTERS, 2000, 77 (08) :1117-1119
[6]   Synthesis of bulk polycrystalline indium nitride at subatmospheric pressures [J].
Dyck, JS ;
Kash, K ;
Hayman, CC ;
Argoitia, A ;
Grossner, MT ;
Angus, JC ;
Zhou, WL .
JOURNAL OF MATERIALS RESEARCH, 1999, 14 (06) :2411-2417
[7]  
EDGAR JE, 1994, EMIS DATAREVIEW SERI, V11
[8]   THERMODYNAMICS OF TERNARY NITRIDE FORMATION BY AMMONOLYSIS - APPLICATION TO LIMON2, NA3WN3, AND NA3WO3N [J].
ELDER, SH ;
DISALVO, FJ ;
TOPOR, L ;
NAVROTSKY, A .
CHEMISTRY OF MATERIALS, 1993, 5 (10) :1545-1553
[9]   Pulsed laser deposition of epitaxial AlN, GaN, and InN thin films on sapphire(0001) [J].
Feiler, D ;
Williams, RS ;
Talin, AA ;
Yoon, HJ ;
Goorsky, MS .
JOURNAL OF CRYSTAL GROWTH, 1997, 171 (1-2) :12-20
[10]   Organoindium azides: new precursors to indium nitride [J].
Fischer, RA ;
Sussek, H ;
Miehr, A ;
Pritzkow, H ;
Herdtweck, E .
JOURNAL OF ORGANOMETALLIC CHEMISTRY, 1997, 548 (01) :73-82