Non-uniformity mitigation in CdTe solar cells: The effects of high-resistance transparent conducting oxide buffer layers

被引：8

作者：

Feldman, SD ^{[1
]}

Mansfield, L ^{[1
]}

Ohno, TR ^{[1
]}

Kaydanov, V ^{[1
]}

Beach, JD ^{[1
]}

Nagle, T ^{[1
]}

机构：

[1] Colorado Sch Mines, Dept Phys, Golden, CO 80401 USA

来源：

Conference Record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005 | 2005年

关键词：

D O I：

10.1109/PVSC.2005.1488121

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

High-resistance transparent conducting oxide buffer layers (HRT's) are commonly added between the doped transparent conducting oxide (TCO) and CdS in both CdTe and Cu(In,Ga)Se-2 (CIGS) based solar cells. The addition of the HRT is known to increase efficiency and has been employed in the production of record CdTe and CIGS devices. Here, we directly and unambiguously observe the non-uniformity mitigation effects of the HRT in CdTe cells through spatially resolved electroluminescence and light-beam induced current measurements. This decrease in non-uniformity has been measured in CdTe cells prepared both at the National Renewable Energy Laboratory and at the Colorado School of Mines both with and without HRT layers. Our measurements suggest that the nonuniformity is caused by thin CdS regions.

引用

页码：271 / 274

页数：4

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