Effects of nonuniformity in thin-film photovoltaics

被引：70

作者：

Karpov, VG ^{[1
]}

Compaan, AD ^{[1
]}

Shvydka, D ^{[1
]}

机构：

[1] Univ Toledo, Dept Phys & Astron, Toledo, OH 43606 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 22期

关键词：

D O I：

10.1063/1.1483118

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We discuss the physical origin and effects of micrononuniformities on thin-film photovoltaics. The key factors are the large device area and the presence of potential barriers in the grain boundaries (for polycrystalline films) and in device junctions. We model the nonuniformity effects in the terms of random microdiodes connected in parallel through a resistive electrode. The microdiodes of low open circuit voltages are shown to affect macroscopically large regions. They strongly reduce the device performance and induce its nonuniform degradation in several different modes. We support our predictions by experiments, which show that the device degradation is driven by the light-induced forward bias and is spatially nonuniform. (C) 2002 American Institute of Physics.

引用

页码：4256 / 4258

页数：3

共 16 条

[1] Correlation of nanostructural heterogeneity and light induced degradation in a-Si:H solar cells [J].