Electron-beam induced degradation in CdTe photovoltaics

被引：34

作者：

Harju, R ^{[1
]}

Karpov, VG ^{[1
]}

Grecu, D ^{[1
]}

Dorer, G ^{[1
]}

机构：

[1] First Solar LLC, Perrysburg, OH 43551 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 04期

关键词：

D O I：

10.1063/1.1305857

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We used electron beam induced current (EBIC) to measure degradation of CdTe photovoltaic cells. We have observed that: (i) the EBIC signal shows a considerable, continuous degradation depending on the electron-beam current, scan area, energy, and sample treatment; (ii) the characteristic degradation time fluctuates between different spots on the same sample; and (iii) grain boundary regions are the most effective collectors of the electron-beam generated charge carriers. Our phenomenological model relates the observed degradation to defects caused by the electron-beam generated electrons and holes. (C) 2000 American Institute of Physics. [S0021-8979(00)04416-9].

引用

页码：1794 / 1801

页数：8

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[2]

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