Electron-beam induced degradation in CdTe photovoltaics

被引：34

作者：

Harju, R ^{[1
]}

Karpov, VG ^{[1
]}

Grecu, D ^{[1
]}

Dorer, G ^{[1
]}

机构：

[1] First Solar LLC, Perrysburg, OH 43551 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 04期

关键词：

D O I：

10.1063/1.1305857

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We used electron beam induced current (EBIC) to measure degradation of CdTe photovoltaic cells. We have observed that: (i) the EBIC signal shows a considerable, continuous degradation depending on the electron-beam current, scan area, energy, and sample treatment; (ii) the characteristic degradation time fluctuates between different spots on the same sample; and (iii) grain boundary regions are the most effective collectors of the electron-beam generated charge carriers. Our phenomenological model relates the observed degradation to defects caused by the electron-beam generated electrons and holes. (C) 2000 American Institute of Physics. [S0021-8979(00)04416-9].

引用

页码：1794 / 1801

页数：8

共 22 条

[11]

Galloway SA, 1997, INST PHYS CONF SER, P579

[12] Photoluminescence study of Cu diffusion and electromigration in CdTe [J].

Grecu, D ;

Compaan, AD .

APPLIED PHYSICS LETTERS, 1999, 75 (03) :361-363

[13]

Hiltner JF, 1999, AIP CONF PROC, V462, P170, DOI 10.1063/1.57895

[14]

KAYDANOV V, COMMUNICATION

[15]

LEANY HJ, 1978, SCANNING MICROSCOPY, V1, P717

[16] Effect of light intensity on current collection in thin-film solar cells [J].

McMahon, TJ ;

von Roedern, B .

CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997, 1997, :375-378

[17]

Meyers P., 1987, U.S. patent, Patent No. [4,710 589, 4710589]

[18]

Redfield David., 1996, Photoinduced Defects in Semiconductors

[19] LIGHT-INDUCED METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON - A SYSTEMATIC STUDY [J].

STUTZMANN, M ;

JACKSON, WB ;

TSAI, CC .

PHYSICAL REVIEW B, 1985, 32 (01) :23-47

[20]

SZE SM, 1981, PHYSICS SEMICONDUCTO

← 1 2 3 →