Photoluminescence study of Cu diffusion and electromigration in CdTe

被引:80
作者
Grecu, D [1 ]
Compaan, AD [1 ]
机构
[1] Univ Toledo, Dept Phys, Toledo, OH 43606 USA
关键词
D O I
10.1063/1.124375
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report changes in the photoluminescence (PL) spectra associated with the diffusion of Cu in CdTe thin films used in CdTe/CdS solar cells. We studied films grown by vapor transport deposition and radio-frequency sputtering as well as single-crystal CdTe. The main effects of Cu diffusion appear to be the quenching of a donor-acceptor transition associated with Cd vacancies and the increase in intensity of a lower energy band due to deep acceptor states. The changes in junction PL are consistent with the movement of Cu+ ions in the electric fields near the CdS/CdTe junction. (C) 1999 American Institute of Physics. [S0003-6951(99)01329-7].
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页码:361 / 363
页数:3
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