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Dopant electromigration in semiconductors

被引：45
作者：
Cahen, D
Chernyak, L
机构：
[1] Dept. of Materials and Interfaces, Weizmann Institute of Science
[2] Intel Corp., Santa Clara, CA 95052-8119
来源：
ADVANCED MATERIALS | 1997年 / 9卷 / 11期
关键词：
D O I：
10.1002/adma.19970091104
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Dopant diffusion and drift in semiconductors is reviewed with special emphasis on those materials in which semiconductivity is preserved when the dopant concentration changes and ambipolar behavior can be obtained by dopant mobility. The Figure is a schematic representation of the electromigration process in CuInSe2 upon application of an electric field.
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页码：861 / +
页数：1
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