Ion drift in Cd-rich HgCdTe crystals

被引：9

作者：

Barbot, JF

Wartlick, BO

Pinhede, LF

Blanchard, C

机构：

[1] Lab. de Métalllurgie Physique, Université de Poitiers, SP2MI-Bd3, 86960 Futuroscope Cedex, Téléport 2

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1996年 / 25卷 / 08期

关键词：

drift of copper; HgCdTe; impurities; pairing reaction;

D O I：

10.1007/BF02655004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ion drift in the electric field of a depleted region has been studied at about room temperature in intentionally Cu-doped p-type Hg0.3Cd0.7Te bulk materials. Capacitance-voltage measurements have mainly been used to investigate the drift of interstitial copper. Diffusion data of copper has been obtained using classical theoretical models based on the dissociation-formation of acceptor-donor complexes (A(s)D(i)). The possibility of junction creation by this ion manipulation under a strong electric field is discussed.

引用

页码：1172 / 1175

页数：4

共 16 条

[1]

ANDREEV VM, 1988, SOV PHYS SEMICOND, V21, P1011

[2] CREATION OF P-N-JUNCTION IN HG0.3CD0.7TE [J].