LOW-TEMPERATURE DEVICE CREATION IN SI VIA FAST LI ELECTROMIGRATION

被引：12

作者：

CHERNYAK, L

LYAKHOVITSKAYA, V

CAHEN, D

机构：

[1] Department of Materials and Interfaces, Weizmann Institute of Science

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 06期

关键词：

D O I：

10.1063/1.114107

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Micrometer-sized homojunction structures can be formed by local application of strong electric fields (∼106 V/cm) at ambient temperatures to Si which was homogeneously doped n-type by Li. Such junctions show electroluminesence and two such junctions, arranged back to back, act as transistors, as evidenced by electron beam induced current, current-voltage and capacitance-voltage measurements. These results are explained by thermally-assisted electromigration of Li.© 1995 American Institute of Physics.

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页码：709 / 711

页数：3

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