Structural disorder induced in hydrogenated amorphous silicon by light soaking

被引：62

作者：

Gibson, JM

Treacy, MMJ

Voyles, PM

Jin, HC

Abelson, JR

机构：

[1] Univ Illinois, Dept Phys, Urbana, IL 61801 USA

[2] Univ Illinois, Dept Mat Sci, Urbana, IL 61801 USA

[3] Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA

[4] NEC Res Inst Inc, Princeton, NJ 08540 USA

[5] Univ Illinois, Coordinated Sci Lab, Urbana, IL 61801 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 21期

关键词：

D O I：

10.1063/1.122683

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show, using variable coherence transmission electron microscopy, that light soaking of amorphous hydrogenated silicon thin films leads to structural changes. We speculate that the structural changes are associated with instability in the as-deposited material. We suggest that improved immunity to Staebler-Wronski degradation could be achieved by a less-ordered material which is closer to the ideal continuous random network. (C) 1998 American Institute of Physics. [S0003-6951(98)02947-7].

引用

收藏

页码：3093 / 3095

页数：3

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