Simple method for examining sulphur passivation of facets in InGaAs-AlGaAs (lambda=0.98 mu m) laser diodes

被引：24

作者：

Beister, G ^{[1
]}

Maege, J ^{[1
]}

Gutsche, D ^{[1
]}

Erbert, G ^{[1
]}

Sebastian, J ^{[1
]}

Vogel, K ^{[1
]}

Weyers, M ^{[1
]}

Wurfl, J ^{[1
]}

Daga, OP ^{[1
]}

机构：

[1] CENT ELECT ENGN RES INST,PILANI 333031,RAJASTHAN,INDIA

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 18期

关键词：

D O I：

10.1063/1.115822

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of (NH4)(2)S-x treatment of the facet of InGaAs/AIGaAs ridge waveguide (RW) laser diodes on the nonradiative current and catastrophic optical damage (GOD) level is reported. Using the power-voltage-current (P-V-I) characteristics of the electroluminescence at low injection levels, changes in the density of surface states at the laser facets are described. (C) 1996 American Institute of Physics.

引用

页码：2467 / 2468

页数：2

共 4 条

[1] EVALUATION OF ELECTROLUMINESCENCE CURRENT AND VOLTAGE DEPENDENCE IN RIDGE WAVE-GUIDE LASER STRUCTURES
BEISTER, G
[J]. SOLID-STATE ELECTRONICS, 1991, 34 (11) : 1255 - 1262
[2] ELECTROCHEMICAL SULFUR PASSIVATION OF VISIBLE (SIMILAR-TO-670 NM) ALGAINP LASERS
HOWARD, AJ
ASHBY, CIH
LOTT, JA
SCHNEIDER, RP
CORLESS, RF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (04): : 1063 - 1067
[3] STEADY-STATE MODEL FOR FACET HEATING LEADING TO THERMAL RUNAWAY IN SEMICONDUCTOR-LASERS
SCHATZ, R
BETHEA, CG
[J]. JOURNAL OF APPLIED PHYSICS, 1994, 76 (04) : 2509 - 2521
[4] ENHANCEMENT OF OUTPUT INTENSITY LIMIT OF SEMICONDUCTOR-LASERS BY CHEMICAL PASSIVATION OF MIRROR FACETS
YOO, JS
LEE, HH
ZORY, P
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (03) : 202 - 203

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