ENHANCEMENT OF OUTPUT INTENSITY LIMIT OF SEMICONDUCTOR-LASERS BY CHEMICAL PASSIVATION OF MIRROR FACETS

被引：15

作者：

YOO, JS ^{[1
]}

LEE, HH ^{[1
]}

ZORY, P ^{[1
]}

机构：

[1] UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/68.79753

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Chemical treatment of the mirror facets of semiconductor lasers is used to reduce nonradiative recombination centers, thereby enhancing their peak output power capabilities. Treatment of the surface with P2S5-NH4OH coupled with washing by (NH4)2S can more than double the output intensity limit. However, the enhancement that can be obtained on a consistent basis is lower.

引用

页码：202 / 203

页数：2

共 10 条

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