High Q inductors for wireless applications in a complementary silicon bipolar process

被引：183

作者：

Ashby, KB

Koullias, IA

Finley, WC

Bastek, JJ

Moinian, S

机构：

[1] WIRELESS MICROSYST,READING,PA 19608

[2] AT&T MICROELECTR,READING,PA 19612

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1996年 / 31卷 / 01期

关键词：

D O I：

10.1109/4.485838

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Rectangular spiral inductors with Q's over 12 have been built in a high-speed complementary bipolar process and characterized for use in wireless applications. An accurate broadband model for the inductors has been developed, and a test filter and mixer hare been built to verify the performance of the inductors and the accuracy of the model.

引用

页码：4 / 9

页数：6

共 8 条

[1] LARGE SUSPENDED INDUCTORS ON SILICON AND THEIR USE IN A 2-MU-M CMOS RF AMPLIFIER [J].