Optical spin polarization in negatively charged InAs self-assembled quantum dots under applied electric field

被引:10
作者
Kalevich, VK [1 ]
Ikezawa, M
Okuno, T
Shiryaev, AY
Zhukov, AE
Ustinov, VM
Brunkov, PN
Masumoto, Y
机构
[1] Univ Tsukuba, Nanosci Special Project, Tsukuba, Ibaraki 3058571, Japan
[2] Univ Tsukuba, Inst Phys, Tsukuba, Ibaraki 3058571, Japan
[3] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2003年 / 238卷 / 02期
关键词
D O I
10.1002/pssb.200303021
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We have studied the influence of an external electric field on the optical spin polarization of initially negatively charged InAs/GaAs quantum dots (QDs). The spin polarization of the carriers was controlled by measuring the photoluminescence (PL) circular polarization. We have found that the PL polarization of the QD is negative under an excitation above the GaAs barrier, and that it becomes positive under an excitation below the barrier. An applied negative electric field destroys both positive and negative polarization. The time decay of the negative polarization was found from time-resolved measurements to exceed strongly the QD radiative lifetime. This fact indicates a long-living spin memory in the dots under study.
引用
收藏
页码:250 / 253
页数:4
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