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Spin polarization dynamics in n-doped InAs/GaAs quantum dots

被引：4
作者：
Cortez, S
Jbeli, A
Marie, X
Krebs, O
Ferreira, R
Amand, T
Voisin, P
Gérard, JM
机构：
[1] Ecole Normale Super, Phys Mat Condensee Lab, F-75005 Paris, France
[2] CNRS, INSA, Lab Phys Mat Condensee, F-31077 Toulouse, France
[3] Lab Photon & Nanostruct, F-92220 Bagneux, France
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 13卷 / 2-4期
关键词：
InAs quantum dot; spin relaxation;
D O I：
10.1016/S1386-9477(02)00181-9
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We present measurements of electronic spin relaxation and manipulation in n-doped semiconductor quantum dots. A luminescence based nonresonant pump-probe method has been developed to determine the degree of spin polarization of electrons confined in the dots. We observe an electronic spin memory effect up to 20 ns. The mechanism of spin polarization and relaxation are thoroughly analyzed both by continuous wave and time resolved nonresonant luminescence. (C) 2002 Elsevier Science B.N. All rights reserved.
引用
收藏
页码：508 / 511
页数：4
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