Electron spin beats in InGaAs GaAs quantum dots

被引：19

作者：

Kalevich, VK ^{[1
]}

Tkachuk, MN

Le Jeune, P

Marie, X

Amand, T

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Inst Natl Sci Appl, CNRS, UMR 5830, Phys Mat Condensee Lab, F-31077 Toulouse, France

来源：

PHYSICS OF THE SOLID STATE | 1999年 / 41卷 / 05期

关键词：

D O I：

10.1134/1.1130874

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Time-resolved picosecond spectroscopy is used for the first time to study optical orientation and spin dynamics of carriers in self-organized In(Ga)As/GaAs quantum-dot (QD) arrays. Optical orientation of carriers created by 1.2 ps light pulses, both in the GaAs matrix and wetting layer, and captured by QDs is found to last a few hundreds of picosecond. The saturation of electron ground state at high-excitation-light intensity leads to electron polarization in excited states close to 100% and to its vanishing in ground state. Electron-spin quantum beats in a transverse magnetic field are observed for the first time in semiconductor QDs. We thus determine the quasi-zero-dimensional electron g factor in In0.5Ga0.5As/GaAs QDs to be: \g(perpendicular to)\ = 0.27 +/-0.03. (C) 1999 American Institute of Physics. [S1063-7834(99)02905-6].

引用

页码：789 / 792

页数：4

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