Resonant photoluminescence from modulation-doped InAs-GaAs quantum dots

被引：8

作者：

Guasch, C

Torres, CMS

Ledentsov, NN

Bimberg, D

Ustinov, VM

Kopev, PS

机构：

[1] UNIV GLASGOW,DEPT ELECT & ELECT ENGN,NANOELECTR RES CTR,GLASGOW G12 8QQ,LANARK,SCOTLAND

[2] TECH UNIV BERLIN,INST FESTKORPERPHYS,D-10623 BERLIN,GERMANY

[3] AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1997年 / 21卷 / 04期

基金：

英国工程与自然科学研究理事会;

关键词：

photoluminescence; InAs; quantum dots;

D O I：

10.1006/spmi.1996.0141

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Resonant luminescence studies of InAs quantum dots (QDs) embedded in a GaAs matrix grown by molecular beam epitaxy are presented, showing marked differences for modulation-doped and undoped QDs and indicating that the doping leads to different exciton formation and carrier relaxation mechanisms. The LO-phonon assisted relaxation of excitons between sub-levels is identified for the undoped QDs whereas no such relaxation mechanism is observed for the modulation-doped QDs. (C) 1997 Academic Press Limited.

引用

页码：509 / 516

页数：8

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