Stress-stimulated luminescence from ZnAl2O4:Mn

被引：108

作者：

Matsui, H ^{[1
]}

Xu, CN ^{[1
]}

Tateyama, H ^{[1
]}

机构：

[1] Kyushu Natl Ind Res Inst, Saga 8410052, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 08期

关键词：

D O I：

10.1063/1.1350429

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the stress-stimulated luminescence (SSL) from ZnAl2O4:Mn. Two kinds of ZnAl2O4:Mn samples were synthesized at different reduction conditions to clarify the influence of the structure defects on the SSL property. The SSL intensity was found to be greatly increased by reducing ZnAl2O4:Mn at a high temperature of 1300 degreesC. The luminescence integrated intensity was about two magnitudes larger than that of conventional ZnAl2O4:Mn. This enhancement is attributed to a large number of trapped carriers in the reduced ZnAl2O4:Mn from the results of thermoluminescence. The SSL spectrum was consistent with the photoluminescence spectrum as well as the afterglow one. It is suggested that the trapped carriers can be excited by stress, and the resultant recombination between excited electrons and holes give rise to an energy which can be transferred to Mn2+ centers to create emission according to the transitions of T-4(1) to (6)A(1). (C) 2001 American Institute of Physics.

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页码：1068 / 1070

页数：3

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