Layer structures under in-plane compressive strains in AlxGa1-xN/AlN interfaces -: art. no. 073305

被引：6

作者：

Cai, DJ ^{[1
]}

Kang, JY

Zhu, ZZ

机构：

[1] Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China

[2] Xiamen Univ, Pen Tung Sah MEMS Res Ctr, Xiamen 361005, Peoples R China

来源：

PHYSICAL REVIEW B | 2003年 / 68卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.68.073305

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The properties of layer structures in AlxGa1-xN/AlN interfaces were studied by employing first-principles total-energy calculations with density-functional theory. A structural transformation of AlxGa1-xN overlayers from normal wurtzite structure to zinc blende structure was found when the compressive in-plane strain was between two critical values.

引用

页数：3

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