Patterned aluminum nanowires produced by electron beam at the surfaces of AlF3 single crystals

被引:14
作者
Ma, C [1 ]
Berta, Y [1 ]
Wang, ZL [1 ]
机构
[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
基金
美国国家航空航天局;
关键词
AlF3; nanostructures;
D O I
10.1016/j.ssc.2003.08.015
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Cubic- and rectangular-shape single crystals of alpha-AlF3 in sizes of 5-50 mum have been synthesized by a solid-vapor phase process. Using the electron beam induced decomposition of AlF3, a method is demonstrated for fabricating patterned aluminum nanowires in AlF3 substrate in a scanning electron microscope. By controlling the accelerating voltage, the beam current and scanning time, it is possible to fabricate metallic nanowires of different sizes. The aluminum nanowires may act as nano-interconnects for nanoelectronics. This work demonstrates a potential technique for e-beam nanofabrication. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码:681 / 685
页数:5
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