Infrared spectroscopy of high k thin layer by multiple internal reflection and attenuated total reflection

被引：18

作者：

Rochat, N ^{[1
]}

Dabertrand, K ^{[1
]}

Cosnier, V ^{[1
]}

Zoll, S ^{[1
]}

Besson, P ^{[1
]}

Weber, U ^{[1
]}

机构：

[1] CEA Grenoble, DRT, DTS, LETI,SCPC, F-38054 Grenoble, France

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 0, NO 8 | 2003年 / 0卷 / 08期

关键词：

D O I：

10.1002/pssc.200303858

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A complete analysis of HfO(2) high k thin layers deposited by metal organic chemical vapour deposition (MOCVD) is made by infrared spectroscopy using different optical configurations. Multiple internal reflection (MIR) and attenuated total reflection (ATR) are used, giving information about morphology and composition of the layers. Samples under investigation are HfO(2) layer of 3 to 12 nm thick deposited at 400 and 550degreesC on thin silicon oxide. MIR technique elucidates carbon content in the layer and ATR informs about the interface evolution, and the crystalline character of the HfO(2) layer. The high sensitivity of MIR coupled with the large spectral range available of ATR allow the full characterisation of these layers. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2961 / 2965

页数：5

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