Passivation of an anodic oxide/p-Si interface stimulated by electron injection

被引：14

作者：

Dittrich, T ^{[1
]}

Burke, T

Koch, F

Rappich, J

机构：

[1] Univ Munich, Tech Phys Dept E16, D-85748 Garching, Germany

[2] Hahn Meitner Inst Kernforsch Berlin GmbH, Abt Si Photovoltaik, D-12489 Berlin, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 08期

关键词：

D O I：

10.1063/1.1356431

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The positive oxide charge (Q(ox)) and the concentration of nonradiative recombination defects (N-it) at a thin anodic oxide/p-Si interface are probed in situ by pulsed photovoltage and photoluminescence techniques during electron injection. Q(ox) and N-it decreased strongly due to electron injection. The observed effect is suggested to be inverse to the negative-bias-temperature instability. Defect reactions at the anodic oxide/p-Si interface are discussed. (C) 2001 American Institute of Physics.

引用

页码：4636 / 4642

页数：7

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