Preparation and electrical properties of sol infiltrated Pb(Zr0.7Ti0.3)O3 ferroelectric thick films

被引:8
作者
Lee, Sung-Gap [1 ]
机构
[1] Gyeongsang Natl Univ, Dept Ceram Engn, Engn Res Inst, Jinju Si 660701, Gyeongnam, South Korea
关键词
sol-gel processes; thick films; ferroelectrics; perovskite;
D O I
10.1016/j.jallcom.2006.12.115
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Ferroelectric PZT(70/30) thick films were fabricated by the hybrid technique adding the sol coating process to the normal screen-printing process to obtain a good densification. Structural and electrical properties of the thick films with the sol concentration were investigated. The thickness of all thick films spin-coated four times was approximately 80-85 mu m. The relative dielectric constant increased and dielectric loss decreased with increasing the sol concentration, the values of the thick film coated with sol concentration of 1.5 M were 698 and 2.5% at 1 kHz, respectively. And the remanent polarization and dielectric breakdown strength of the thick film coated with sol concentration of 1.5 M were about 38 mu C/cm(2) and 200 kV/cm, respectively. The leakage current densities were less than 10(-8) A/cm(2) at the applied electric field range of 0-100 kV/cm in all thick films. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:406 / 409
页数:4
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