Study of xα-Fe2O3-(1-x)ZrO2 solid solution for low-temperature resistive oxygen gas sensors

被引：12

作者：

Cao, WQ ^{[1
]}

Tan, OK ^{[1
]}

Zhu, WG ^{[1
]}

Pan, JS ^{[1
]}

Bin, J ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Ctr Microelect, Sensors & Actuators Lab, Singapore 2263, Singapore

来源：

IEEE SENSORS JOURNAL | 2003年 / 3卷 / 04期

关键词：

D O I：

10.1109/JSEN.2003.815787

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A noble type of oxygen-sensitive and electrical-conductive material, ZrO2-based with alpha - Fe2O3 thick-film gas sensor, was investigated for low operating temperature. Amorphous-like solid solutions of xalpha - Fe2O3 - (1 - x)ZrO2 powders were derived using the high-energy ball milling technique, and their physical and microstructural properties were characterized from DTA, XRD, TEM, and XPS. The oxygen gas-sensing properties of the screen-printed thick-film gas sensors fabricated from such mechanically-alloyed materials were characterized systematically. Very good sensing properties were obtained with a relative resistance value of 82 in 20% oxygen, and at a low operating temperature of 320 degreesC. AC impedance spectra and thermally stimulated current were characterized to investigate the conduction properties of the solid solution, 0.2alpha - Fe2O3 - 0.8ZrO(2), in air and nitrogen (carrier gas), respectively. It was found that the Arrhenius plots of sigmaT versus 1000/T have two distinct gradients corresponding to two activation energies in the high and low temperature regions. The transition temperature occurs at about 320 C that corresponds to an optimal operating temperature of the gas sensor. It is believed that the high oxygen vacancy concentration present in the solid solution, 0.2alpha - Fe2O3 - 0.8ZrO(2), and the dissociation of the associated oxygen vacancy defect complexes at 320 degreesC are the critical factors for the high relative resistance to oxygen gas at low operating temperature.

引用

页码：421 / 434

页数：14

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