In situ silicon oxide based intermediate reflector for thin-film silicon micromorph solar cells

被引：201

作者：

Buehlmann, P. ^{[1
]}

Bailat, J. ^{[1
]}

Domine, D. ^{[1
]}

Billet, A. ^{[1
]}

Meillaud, F. ^{[1
]}

Feltrin, A. ^{[1
]}

Ballif, C. ^{[1
]}

机构：

[1] Univ Neuchatel, Inst Microtechnol IMT, CH-2000 Neuchatel, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 14期

关键词：

Electric losses - Electric properties - Mirrors - Optical properties - Solar cells - Thin films;

D O I：

10.1063/1.2794423

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show that SiO-based intermediate reflectors (SOIRs) can be fabricated in the same reactor and with the same process gases as used for thin-film silicon solar cells. By varying input gas ratios, SOIR layers with a wide range of optical and electrical properties are obtained. The influence of the SOIR thickness in the micromorph cell is studied and current gain and losses are discussed. Initial micromorph cell efficiency of 12.2% (V-oc=1.40 V, fill factor=71.9%, and J(sc)=12.1 mA/cm(2)) is achieved with top cell, SOIR, and bottom cell thicknesses of 270, 95, and 1800 nm, respectively. (c) 2007 American Institute of Physics.

引用

页数：3

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