High efficiency protocrystalline silicon/microcrystalline silicon tandem cell with zinc oxide intermediate layer

被引：44

作者：

Myong, Seung Yeop

Sriprapha, Kobsak

Miyajima, Shinsuke

Konagai, Makoto

Yamada, Akira

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

[2] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Meguro Ku, Tokyo 1528552, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 26期

关键词：

D O I：

10.1063/1.2752736

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors develop a hydrogenated protocrystalline silicon (pc-Si:H)/hydrogenated microcrystalline silicon (mu c-Si:H) double-junction solar cell structure employing a boron-doped zinc oxide (ZnO:B) intermediate layer. Highly stable intrinsic pc-Si:H and mu c-Si:H absorbers are prepared by a 60 MHz very-high-frequency plasma-enhanced chemical vapor deposition technique. Degenerate ZnO:B intermediate and back reflectors are deposited via a metal organic chemical vapor deposition technique. Because the ZnO:B intermediate layer reduces the potential thickness for the pc-Si:H absorber in the top cell, this double-juncion structure is a promising candidate to fabricate highly stable Si-based thin-film solar cells. Consequently, the high conversion efficiency of 12.0% is achieved. (c) 2007 American Institute of Physics.

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