Double amorphous silicon-carbide p-layer structures producing highly stabilized pin-type protocrystalline silicon multilayer solar cells -: art. no. 193509

被引：27

作者：

Myong, SY

Lim, KS

Pears, JM

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn & Comp Sci, Taejon 305701, South Korea

[2] Clarion Univ Pennsylvania, Dept Phys, Clarion, PA 16214 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 19期

关键词：

D O I：

10.1063/1.2126802

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have applied double p-type amorphous silicon-carbide (p-a-SiC:H) layer structures to pin-type protocrystalline silicon (pc-Si:H) multilayer solar cells. The less-pronounced initial short-wavelength quantum efficiency variation against the biased voltage and the wide overlap of dark current-voltage (J(D)-V) and short-circuit current-open-circuit voltage (J(sc)-V-oc) characteristics prove that the double p-a-SiC:H layer structure successfully reduces recombination at the p/i interface. Therefore, we achieved highly stabilized efficiency of 9.0% without any backreflector. (C) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

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