Highly stabilized protocrystalline silicon multilayer solar cell using a silicon-carbide double p-layer structure

被引：40

作者：

Myong, SY

Kwon, SW

Lim, KS

Konagai, M

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn & Comp Sci, Taejon 305701, South Korea

[2] TIT, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2005年 / 85卷 / 01期

关键词：

pc-Si : H multilayer solar cell; double p-layer structure; photo-CVD; hydrogen dilution; light-induced metastability;

D O I：

10.1016/j.solmat.2004.04.009

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We have investigated a pin-type protocrystalline silicon (pc-Si:H) multilayer solar cell fabricated by employing a silicon-carbide double p-layer structure and a layered structure of multilayer processing through alternate H, dilution. The initial conversion efficiency is drastically improved by incorporating a hydrogen-diluted boron-doped amorphous silicon-carbide (p-a-SICA) buffer layer at the p/i interface. Remarkably, the pc-Si:H multilayer absorber exhibits superior light-induced metastability to a conventional amorphous silicon (a-Si:H) absorber. Therefore, we have successfully achieved a highly stabilized efficiency of 9.0% without using any back reflector. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：133 / 140

页数：8

共 22 条

[1] Amorphous and microcrystalline silicon films grown at low temperatures by radio-frequency and hot-wire chemical vapor deposition [J].