Enhanced vertical photo-sensitivity in μc-Si:H/a-Si:H superlattices

被引：13

作者：

Jun, KH ^{[1
]}

Lim, KS ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Yusong Gu, Taejon 305701, South Korea

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2000年 / 261卷 / 1-3期

关键词：

D O I：

10.1016/S0022-3093(99)00615-8

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The microcrystalline silicon/amorphous silicon (mu c-Si:H/a-Si:H) superlattice showed an enhanced vertical,photo- sensitivity (photo-conductivity/dark-conductivity), whereas it reserved a lateral photo-sensitivity nearly unchanged. The film was fabricated by alternating the mixing of SiH4 and HZ in a photo-chemical vapor deposition system. The fact that a high vertical photo-sensitivity and an obvious crystalline volume fraction can be obtained at the same time distinguishes the mu c-Si:H/a-Si:H superlattice from the bulk mu c-Si:H. The change of the vertical dark-conductivity with the sublayer thickness was explained by the change of the a-Si:PI sublayer's electrical conduction property. We think that the thin a-Si:H sublayers play an important role of perturbing a columnar structure of the mu c-Si:H. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：268 / 272

页数：5

共 13 条

[1] SUBSTRATE SELECTIVITY IN THE FORMATION OF MICROCRYSTALLINE SILICON - MECHANISMS AND TECHNOLOGICAL CONSEQUENCES [J].

CABARROCAS, PRI ;

LAYADI, N ;

HEITZ, T ;

DREVILLON, B ;

SOLOMON, I .

APPLIED PHYSICS LETTERS, 1995, 66 (26) :3609-3611

[2] Raman scattering spectra and electrical conductivity of thin silicon films with a mixed amorphous-nanocrystalline phase composition: Determination of the nanocrystalline volume fraction [J].

Golubev, VG ;

Davydov, VY ;

Medvedev, AV ;

Pevtsov, AB ;

Feoktistov, NA .

PHYSICS OF THE SOLID STATE, 1997, 39 (08) :1197-1201

[3] In situ correlation between the optical and electrical properties of thin intrinsic and n-type microcrystalline silicon films [J].

Hamma, S ;

Cabarrocas, PRI .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (11) :7282-7288

[4]

KOCKA J, 1998, P 2 WORLD C PHOT SOL, P785

[5] THE DYNAMICS OF PHOTOEXCITED CARRIERS IN MICROCRYSTALLINE SILICON [J].

KOMURO, S ;

AOYAGI, Y ;

SEGAWA, Y ;

NAMBA, S ;

MASUYAMA, A ;

MATSUDA, A ;

TANAKA, K .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) :1658-1662

[6]

KRUANGAM D, 1984, 1 INT PHOT SCI ENG C, P437

[7] PERSISTENT PHOTOCONDUCTIVITY AND BAND-OFFSET IN MU-C-SI H/A-SIH SUPERLATTICES [J].

LIU, J ;

FENG, LG .

THIN SOLID FILMS, 1993, 235 (1-2) :76-79

[8]

MEIER J, 1998, P 2 WORLD C PHOT SOL, P375

[9] PREPARATION OF MU-C-SI-H/A-SI-H MULTILAYERS AND THEIR OPTOELECTRIC PROPERTIES [J].

NAKATA, M ;

SHIRAI, H ;

NAMIKAWA, T ;

SHIMIZU, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1990, 29 (06) :1027-1032

[10] Performance of p-i-n solar cells with intrinsic mu c-Si:H layer [J].

Saitoh, K ;

Ishiguro, N ;

Yanagawa, N ;

Tanaka, H ;

Sadamoto, M ;

Fukuda, S ;

Ashida, Y ;

Fukuda, N .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1996, 198 :1093-1096

← 1 2 →