Preparation and main characteristics of lead-free K0.5Bi0.5TiO3 ferroelectric thin films

被引：17

作者：

Yang, CH ^{[1
]}

Wang, Z ^{[1
]}

Xu, HY ^{[1
]}

Sun, ZH ^{[1
]}

Jiang, FY ^{[1
]}

Han, JPZJR ^{[1
]}

机构：

[1] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 262卷 / 1-4期

基金：

中国国家自然科学基金;

关键词：

polycrystalline deposition; titanium compounds; dielectric materials;

D O I：

10.1016/j.jcrysgro.2003.10.027

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A kind of novel ferroelectric K0.5Bi0.5TiO3 thin films have been grown on P-Si(l 11) substrates by a spin coating metalorganic decomposition method. The structural properties were studied by X-ray diffraction. The dielectric and ferroelectric properties and insulation characteristic were also studied. The results show that the film annealed at 740degreesC for 4 min presents perovskite phase; the leakage current is below 1.07 x 10(-10) A when the bias voltage is less than 7 V; the memory window in the C-V curve is 11 V in the applied voltage range from - 12 to + 8 V; and the dielectric constant and dielectric loss are 57 and 0.085, respectively, at a frequency of 100 kHz at room temperature. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：304 / 307

页数：4

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