ELECTRICAL CHARACTERISTICS OF EXCIMER LASER ABLATED BISMUTH TITANATE FILMS ON SILICON

被引：58

作者：

MAFFEI, N ^{[1
]}

KRUPANIDHI, SB ^{[1
]}

机构：

[1] PENN STATE UNIV,DEPT ENGN SCI & MECH,UNIV PK,PA 16802

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 08期

关键词：

D O I：

10.1063/1.352303

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bismuth titanate thin films were deposited by the excimer laser ablation technique directly onto bare silicon substrates. Current-voltage studies suggested the formation of a heterojunction at the Bi4Ti3O12/Si interface. The current characteristics at voltages > 1 V were ascribed to trap-limited space-charge conduction. Hysteretic capacitance-voltage data indicated that charge injection was dominant, masking any polarization mode necessary for nonvolatile memory operation. Ferroelectric hysteretic studies, however, indicated that the films were ferroelectric with P(r) congruent-to 10 muC/cm2 and E(c) congruent-to 150 kV/cm.

引用

页码：3617 / 3621

页数：5

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