Ultra-thin gate oxides and ultra-shallow junctions for high performance, sub-100nm pMOSFETs

被引：12

作者：

Timp, G ^{[1
]}

Agarwal, A ^{[1
]}

Bourdelle, KK ^{[1
]}

Bower, JE ^{[1
]}

Boone, T ^{[1
]}

Ghetti, A ^{[1
]}

Green, M ^{[1
]}

Garno, J ^{[1
]}

Gossmann, H ^{[1
]}

Jacobson, D ^{[1
]}

Kleiman, R ^{[1
]}

Kornblit, A ^{[1
]}

Klemens, F ^{[1
]}

Moccio, S ^{[1
]}

O'Malley, ML ^{[1
]}

Ocola, L ^{[1
]}

Rosamilia, J ^{[1
]}

Sapjeta, J ^{[1
]}

Silverman, P ^{[1
]}

Sorsch, T ^{[1
]}

Timp, W ^{[1
]}

Tennant, D ^{[1
]}

机构：

[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746534

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1041 / 1043

页数：3

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