Bi: Perfect surfactant for Ge growth on Si(111)?

被引：36

作者：

Schmidt, T ^{[1
]}

Falta, J

Materlik, G

Zeysing, J

Falkenberg, G

Johnson, RL

机构：

[1] Deutsch Elektr Synchrotron DESY, Hamburger Synchrotronstrahlungslabor HASYLAB, D-22607 Hamburg, Germany

[2] Univ Hamburg, Inst Expt Phys 2, D-22761 Hamburg, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 10期

关键词：

D O I：

10.1063/1.123560

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the growth of Ge on Bi-terminated Bi:Si(111)-root 3 x root 3. In-situ measurements of x-ray standing waves, crystal truncation rods and scanning tunneling microscopy clearly show that, at substrate temperatures around 485 degrees C, smooth and homogeneous Ge films of thicknesses exceeding 30 bilayers Ge can be grown. For Ge coverages larger than 10 bilayers, the Ge film is completely relaxed. Bi is found to segregate to the surface during Ge deposition, and can be removed from the surface after growth by mild annealing at 520 degrees C as proven by Auger electron spectroscopy. (C) 1999 American Institute of Physics. [S0003-6951(99)03310-0].

引用

页码：1391 / 1393

页数：3

共 17 条

[1] X-ray interface characterization of Ge delta layers on Si(001) [J].