SiC thin-film Fabry-Perot interferometer for fiber-optic temperature sensor

被引:28
作者
Cheng, L [1 ]
Steckl, AJ
Scofield, J
机构
[1] Univ Cincinnati, Nanoelect Lab, Cincinnati, OH 45221 USA
[2] USAF, Res Lab, Wright Patterson AFB, OH 45433 USA
关键词
Fabry-Perot interferometer; fiber-optic; sapphire; SiC; thin-film;
D O I
10.1109/TED.2003.816106
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Polycrystalline SiC grown on single-crystal sapphire substrates have been investigated as thin-film Fabry-Perot interferometers for fiber-optic temperature measurements in harsh temperatures. SiC-based temperature sensors are compact in size, robust, and stable at high temperatures, making them one of the best choices for high temperature applications. SiC films with thickness of about 0.5-2.0 mum were grown at 1100 degreesC by chemical vapor deposition (CVD) with trimethylsilane. The effect of operating temperature on the shifts in resonance minima, Deltalambda(m), of the SiC/sapphire substrate has been measured in the visible-infrared wavelength range. A temperature sensitivity of 1.9 x 10(-5)/degreesC is calculated using the minimum at similar to700 nm. Using a white, broadband light source, a temperature accuracy of +/-3.5degreesC is obtained over the temperature range of 22 degreesC to 540 degreesC.
引用
收藏
页码:2159 / 2164
页数:6
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