Lasing in Thue-Morse structures with optimized aperiodicity

被引：16

作者：

Noh, Heeso ^{[2
]}

Yang, Jin-Kyu ^{[2
]}

Boriskina, Svetlana V. ^{[1
]}

Rooks, Michael J. ^{[2
]}

Solomon, Glenn S. ^{[3
]}

Dal Negro, Luca ^{[1
,4
]}

Cao, Hui ^{[2
]}

机构：

[1] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA

[2] Yale Univ, Dept Appl Phys, New Haven, CT 06511 USA

[3] Univ Maryland, Joint Quantum Inst, NIST, Gaithersburg, MD 20899 USA

[4] Boston Univ, Div Mat Sci & Engn, Brookline, MA 02446 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 20期

基金：

美国国家科学基金会;

关键词：

LIGHT WAVES; LOCALIZATION;

D O I：

10.1063/1.3592850

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate lasing in two-dimensional Thue-Morse structures fabricated in a semiconductor membrane. By changing the relative size of two scatterers that correspond to the building blocks A and B, we gradually vary structural aperiodicity and find an optimal degree of aperiodicity where light confinement is maximal and lasing is the strongest. At various degrees of aperiodicity, different types of modes acquire the highest quality factors and may be selected for lasing. This work opens a way of controlling lasing characteristic via structural aperiodicity. (C) 2011 American Institute of Physics. [doi:10.1063/1.3592850]

引用

页数：3

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