DNA detection on transistor arrays following mutation-specific enzymatic amplification

被引：97

作者：

Pouthas, F ^{[1
]}

Gentil, C ^{[1
]}

Côte, D ^{[1
]}

Bockelmann, U ^{[1
]}

机构：

[1] Ecole Normale Super, Phys Mat Condensee Lab, F-75005 Paris, France

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 09期

关键词：

D O I：

10.1063/1.1650907

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An integrated array of silicon field-effect transistor structures is used for electronic detection of label-free DNA. Measurements of the dc current-voltage characteristics of the transistors gives us access to reproducible detection of single- and double-stranded DNA, locally adsorbed on the surface of the device. We combine this approach with allele-specific polymerase chain reaction, to test for the 35delG mutation, a frequent mutation related to prelingual nonsyndromic deafness. (C) 2004 American Institute of Physics.

引用

页码：1594 / 1596

页数：3

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